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1/11 march 2002 stp11nm60a stp11nm60afp - STB11NM60A-1 n-channel 600v - 0.4 w - 11a to-220/to-220fp/i 2 pak mdmesh?power mosfet n typical r ds (on) = 0.4 w n high dv/dt n low input capacitance and gate charge n low gate input resistance description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt. the adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ordering information type v dss r ds(on) i d stp11nm60a stp11nm60afp STB11NM60A-1 600 v 600 v 600 v <0.45 w <0.45 w <0.45 w 11 a 11 a 11 a sales type marking package packaging stp11nm60a p11nm60a to-220 tube stp11nm60afp p11nm60afp to-220fp tube STB11NM60A-1 b11nm60a i 2 pa k tube to-220 1 2 3 1 2 3 i 2 pak 1 2 3 to-220fp internal schematic diagram 4 .com u datasheet
stp11nm60a/stp11nm60afp/STB11NM60A-1 2/11 absolute maximum ratings ( l ) pulse width limited by safe operating area (1) i sd 11a, di/dt 200a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed thermal data on/off symbol parameter value unit stp11nm60a STB11NM60A-1 stp11nm60afp v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 11 11 (*) a i d drain current (continuous) at t c = 100c 7 7 (*) a i dm ( l ) drain current (pulsed) 44 44 (*) a p tot total dissipation at t c = 25c 110 35 w derating factor 0.88 0.28 w/c dv/dt (1) peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 -55 to 150 c c to-220 / i 2 pak to-220-fp rthj-case thermal resistance junction-case max 1.13 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5 a 0.4 0.45 w 4 .com u datasheet
3/11 stp11nm60a/stp11nm60afp/STB11NM60A-1 electrical characteristics (tcase =25c unless otherwise specified) dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 15 v , i d = 5.5 a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1211 248 21 pf pf pf c oss eq. (3) equivalent output capacitance v gs = 0v, v ds = 0v to 480v 116 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.9 w symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 300 v, i d = 5.5 a r g = 4.7 w v gs = 10 v (resistive load see, figure 3) 14 15 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 11 a, v gs = 10v 35 9 14 49 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d = 11 a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 39 10 20 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 11 44 a a v sd (1) forward on voltage i sd = 11 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100a/s v dd = 100v, t j = 150c (see test circuit, figure 5) 560 5.7 20.5 ns c a 4 .com u datasheet
stp11nm60a/stp11nm60afp/STB11NM60A-1 4/11 thermal impedance for to-220 / i2pak transfer characteristics output characteristics safe operating area for to-220fp safe operating area for to-220 / i2pak thermal impedance for to-220fp 4 .com u datasheet
5/11 stp11nm60a/stp11nm60afp/STB11NM60A-1 normalized gate thereshold voltage vs temp. normalized on resistance vs temperature capacitance variations gate charge vs gate-source voltage transconductance static drain-source on resistance 4 .com u datasheet
stp11nm60a/stp11nm60afp/STB11NM60A-1 6/11 source-drain diode forward characteristics 4 .com u datasheet
7/11 stp11nm60a/stp11nm60afp/STB11NM60A-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load 4 .com u datasheet
stp11nm60a/stp11nm60afp/STB11NM60A-1 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c 4 .com u datasheet
9/11 stp11nm60a/stp11nm60afp/STB11NM60A-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data 4 .com u datasheet
stp11nm60a/stp11nm60afp/STB11NM60A-1 10/11 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data 4 .com u datasheet
11/11 stp11nm60a/stp11nm60afp/STB11NM60A-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com 4 .com u datasheet

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